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ZXMN2F30FHQ

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ZXMN2F30FHQ Image

The ZXMN2F30FHQ from Diodes Incorporated is a MOSFET with Continous Drain Current 4.9 A, Drain Source Resistance 65 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.6 to 1.5 V. Tags: Surface Mount. More details for ZXMN2F30FHQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    ZXMN2F30FHQ
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.9 A
  • Drain Source Resistance
    65 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.6 to 1.5 V
  • Gate Charge
    4.8 nC
  • Power Dissipation
    1.4 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT23
  • Applications
    LED Lighting, Charging applications in portable equipment, DC-DC Converters, Motor Control

Technical Documents
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