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ZXMN3G32DN8

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ZXMN3G32DN8 Image

The ZXMN3G32DN8 from Diodes Incorporated is a MOSFET with Continous Drain Current 7.1 A, Drain Source Resistance 28 to 45 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for ZXMN3G32DN8 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ZXMN3G32DN8
  • Manufacturer
    Diodes Incorporated
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    7.1 A
  • Drain Source Resistance
    28 to 45 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    10.5 nC
  • Power Dissipation
    1.8 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    DC-DC Converters, Power management functions, Load switching, Motor control, Back lighting

Technical Documents
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