1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Diodes Incorporated
  6. ZXMS6004DGQ

ZXMS6004DGQ

Download Datasheet Request Quote

Note : Your request will be directed to Diodes Incorporated.

ZXMS6004DGQ Image

The ZXMS6004DGQ from Diodes Incorporated is a MOSFET with Continous Drain Current 1.3 A, Drain Source Resistance 350 to 600 Milliohm, Drain Source Breakdown Voltage 60 V, Power Dissipation 3 W, Temperature operating range -40 to 150 Degree C. Tags: Surface Mount. More details for ZXMS6004DGQ can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    ZXMS6004DGQ
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, 1.3 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.3 A
  • Drain Source Resistance
    350 to 600 Milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Power Dissipation
    3 W
  • Temperature operating range
    -40 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT223

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products