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ZXMS6004DT8Q

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ZXMS6004DT8Q Image

The ZXMS6004DT8Q from Diodes Incorporated is a MOSFET with Continous Drain Current 1.2 A, Drain Source Resistance 350 to 600 Milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Threshold Voltage 0.7 to 1.5 V, Power Dissipation 2.3 W. Tags: Surface Mount. More details for ZXMS6004DT8Q can be seen below.

Product Specifications

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Product Details

  • Part Number
    ZXMS6004DT8Q
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, 1.2 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    1.2 A
  • Drain Source Resistance
    350 to 600 Milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Threshold Voltage
    0.7 to 1.5 V
  • Power Dissipation
    2.3 W
  • Temperature operating range
    -40 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SM-8

Technical Documents
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