1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Diodes Incorporated
  6. ZXMS6005DN8

ZXMS6005DN8

Download Datasheet Request Quote

Note : Your request will be directed to Diodes Incorporated.

ZXMS6005DN8 Image

The ZXMS6005DN8 from Diodes Incorporated is a MOSFET with Continous Drain Current 1.8 A, Drain Source Resistance 150 to 250 Milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Threshold Voltage 0.7 to 1.5 V, Power Dissipation 1.56 W. Tags: Surface Mount. More details for ZXMS6005DN8 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    ZXMS6005DN8
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, 1.8 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    1.8 A
  • Drain Source Resistance
    150 to 250 Milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Threshold Voltage
    0.7 to 1.5 V
  • Power Dissipation
    1.56 W
  • Temperature operating range
    -40 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    Lamp Driver, Motor Driver, Relay Driver, Solenoid Driver

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products