1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Diodes Incorporated
  6. ZXMS6005N8

ZXMS6005N8

Download Datasheet Request Quote

Note : Your request will be directed to Diodes Incorporated.

ZXMS6005N8 Image

The ZXMS6005N8 from Diodes Incorporated is a MOSFET with Continous Drain Current 2 A, Drain Source Resistance 150 to 250 Milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Threshold Voltage 0.7 to 1.5 V, Power Dissipation 1.65 W. Tags: Surface Mount. More details for ZXMS6005N8 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    ZXMS6005N8
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, 2 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2 A
  • Drain Source Resistance
    150 to 250 Milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Threshold Voltage
    0.7 to 1.5 V
  • Power Dissipation
    1.65 W
  • Temperature operating range
    -40 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products