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ZXMS6005SGQ

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The ZXMS6005SGQ from Diodes Incorporated is a MOSFET with Continous Drain Current 2 A, Drain Source Resistance 150 to 250 Milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Threshold Voltage 0.7 to 1.5 V, Power Dissipation 1.6 W. Tags: Surface Mount. More details for ZXMS6005SGQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    ZXMS6005SGQ
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, 2 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2 A
  • Drain Source Resistance
    150 to 250 Milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Threshold Voltage
    0.7 to 1.5 V
  • Power Dissipation
    1.6 W
  • Temperature operating range
    -40 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT223

Technical Documents
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