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BRD630

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The BRD630 from First Silicon is a MOSFET with Continous Drain Current 5.7 to 9 A, Drain Source Resistance 0.34 to 0.4 ohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for BRD630 can be seen below.

Product Specifications

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Product Details

  • Part Number
    BRD630
  • Manufacturer
    First Silicon
  • Description
    200 V, 5.7 to 9 A, N-Channel Enhancement Mode

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5.7 to 9 A
  • Drain Source Resistance
    0.34 to 0.4 ohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    19 to 25 nC
  • Switching Speed
    8 to 160 ns
  • Power Dissipation
    46 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Through Hole
  • Package
    TO-252
  • Applications
    Power switching application, Hard switched and high frequency circuits, Uninterruptible power supply
  • Note
    Input Capacitance :- 550 pF
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