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FTK02N10

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The FTK02N10 from First Silicon is a MOSFET with Continous Drain Current 2 A, Drain Source Resistance 80 to 100 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.0 to 3.0 V. Tags: Surface Mount. More details for FTK02N10 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK02N10
  • Manufacturer
    First Silicon
  • Description
    100 V, 2 A, N-Channel Enhancement Mode

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2 A
  • Drain Source Resistance
    80 to 100 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.0 to 3.0 V
  • Gate Charge
    24 nC
  • Switching Speed
    6 to 40.2 ns
  • Power Dissipation
    0.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SOT-23-6L
  • Applications
    Power switching application
  • Note
    Input Capacitance :- 890 pF
View details on the manufacturer's website
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