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FTK03N20T

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The FTK03N20T from First Silicon is a MOSFET with Continous Drain Current 1.9 to 3 A, Drain Source Resistance 0.7 to 0.85 ohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Surface Mount. More details for FTK03N20T can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK03N20T
  • Manufacturer
    First Silicon
  • Description
    200 V, 1.9 to 3 A, N-Channel Enhancement Mode

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.9 to 3 A
  • Drain Source Resistance
    0.7 to 0.85 ohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    4.8 to 9 nC
  • Switching Speed
    10 to 70 ns
  • Power Dissipation
    1.78 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SOT-223
  • Applications
    High efficient switched mode power supplies, TV Power, Adapter/charger, Server Power, Networking
  • Note
    Input Capacitance :- 500 pF
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