1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. First Silicon
  6. FTK08DFN

FTK08DFN

Request Quote

Note : Your request will be directed to First Silicon.

The FTK08DFN from First Silicon is a MOSFET with Continous Drain Current -3.6 A, Drain Source Resistance 60 to 170 milli-ohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -0.4 to -1 V. Tags: Surface Mount. More details for FTK08DFN can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FTK08DFN
  • Manufacturer
    First Silicon
  • Description
    -20 V, -3.6 A, P-Channel Enhancement Mode

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -3.6 A
  • Drain Source Resistance
    60 to 170 milli-ohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -0.4 to -1 V
  • Gate Charge
    7.2 nC
  • Switching Speed
    5 to 43 ns
  • Power Dissipation
    1.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    DFN22
  • Applications
    Optimized for Battery and Load Management Applications in Portable Equipment, Li-Ion Battery Charging and Protection Circuits, High Power Management in Portable, Battery Powered Products, High Side Load Switch
  • Note
    Input Capacitance :- 480 pF
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products