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FTK0910D

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The FTK0910D from First Silicon is a MOSFET with Continous Drain Current 4.8 to 8 A, Drain Source Resistance 160 to 210 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Surface Mount. More details for FTK0910D can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK0910D
  • Manufacturer
    First Silicon
  • Description
    100 V, 4.8 to 8 A, N-Channel Enhancement Mode

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.8 to 8 A
  • Drain Source Resistance
    160 to 210 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    13.4 to 21 nC
  • Switching Speed
    3.6 to 22 ns
  • Power Dissipation
    32 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Applications
    Networking, Load Switch, LED applications
  • Note
    Input Capacitance :- 1190 pF
View details on the manufacturer's website
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