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FTK0976P

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The FTK0976P from First Silicon is a MOSFET with Continous Drain Current 50.6 to 80 A, Drain Source Resistance 7.6 to 14 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -12 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Through Hole. More details for FTK0976P can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK0976P
  • Manufacturer
    First Silicon
  • Description
    100 V, 50.6 to 80 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    50.6 to 80 A
  • Drain Source Resistance
    7.6 to 14 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -12 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    39.7 to 80 nC
  • Switching Speed
    14.6 to 168 ns
  • Power Dissipation
    156 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Networking, Load Switch, LED applications, Quick Charger
  • Note
    Input Capacitance :- 5100 pF
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