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FTK0982BDFN33

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The FTK0982BDFN33 from First Silicon is a MOSFET with Continous Drain Current 30 to 48 A, Drain Source Resistance 9.8 to 16.8 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Surface Mount. More details for FTK0982BDFN33 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK0982BDFN33
  • Manufacturer
    First Silicon
  • Description
    100 V, 30 to 48 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    30 to 48 A
  • Drain Source Resistance
    9.8 to 16.8 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    26.1 to 39 nC
  • Switching Speed
    14.2 to 84 ns
  • Power Dissipation
    61 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    PPAK3X3
  • Applications
    Networking, Load Switch, LED applications
  • Note
    Input Capacitance :- 2145 pF
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