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FTK0986DFN56

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The FTK0986DFN56 from First Silicon is a MOSFET with Continous Drain Current 19 to 30 A, Drain Source Resistance 21 to 36 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -12 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for FTK0986DFN56 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK0986DFN56
  • Manufacturer
    First Silicon
  • Description
    100 V, 19 to 30 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    19 to 30 A
  • Drain Source Resistance
    21 to 36 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -12 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    9.8 to 18 nC
  • Switching Speed
    11 to 64 ns
  • Power Dissipation
    68 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    DFN56
  • Applications
    Motor Drive, Power Tools, LED Lighting
  • Note
    Input Capacitance :- 1200 pF
View details on the manufacturer's website
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