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FTK1013C

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The FTK1013C from First Silicon is a MOSFET with Continous Drain Current -0.55 A, Drain Source Resistance 590 to 900 milli-ohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage -0.5 to -1.1 V. Tags: Surface Mount. More details for FTK1013C can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK1013C
  • Manufacturer
    First Silicon
  • Description
    -20 V, -0.55 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.55 A
  • Drain Source Resistance
    590 to 900 milli-ohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    -0.5 to -1.1 V
  • Switching Speed
    0.04 to 1.1 us
  • Power Dissipation
    280 mW
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SOT-523
  • Applications
    Load/Power Switching, Interfacing Switching, Battery Management for Ultra Small Portable Electronics, Logic Level Shift
  • Note
    Input Capacitance :- 60 pF
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