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FTK1013SOT883

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The FTK1013SOT883 from First Silicon is a MOSFET with Continous Drain Current -275 to -400 mA, Drain Source Resistance 0.8 to 2.7 ohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -6 to 6 V, Gate Source Threshold Voltage -0.45 to -1.3 V. Tags: Surface Mount. More details for FTK1013SOT883 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK1013SOT883
  • Manufacturer
    First Silicon
  • Description
    -20 V, -275 to -400 mA, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -275 to -400 mA
  • Drain Source Resistance
    0.8 to 2.7 ohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -6 to 6 V
  • Gate Source Threshold Voltage
    -0.45 to -1.3 V
  • Gate Charge
    1.5 nC
  • Switching Speed
    5 to 35 ns
  • Power Dissipation
    250 mW
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SOT-883
  • Applications
    Relays Driver, Lamps Driver, Memories Driver, Battery Operated Systems, Load/Power Switching Cell Phones, Pagers
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