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FTK1029NP

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The FTK1029NP from First Silicon is a MOSFET with Continous Drain Current 0.34 A, Drain Source Resistance 0.9 to 5.3 ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for FTK1029NP can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK1029NP
  • Manufacturer
    First Silicon
  • Description
    60 V, 0.34 A, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.34 A
  • Drain Source Resistance
    0.9 to 5.3 ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    30 nC
  • Switching Speed
    10 to 30 ns
  • Power Dissipation
    0.15 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SOT-563
  • Applications
    Relays Driver, Lamps Driver, Memories Driver, Battery Operated Systems, Load/Power Switching Cell Phones, Pagers
  • Note
    Input Capacitance :- 40 pF
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