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FTK15N12CSDFN

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The FTK15N12CSDFN from First Silicon is a MOSFET with Continous Drain Current 15 A, Drain Source Resistance 3.1 to 11 milli-ohm, Drain Source Breakdown Voltage 12 V, Gate Source Voltage 8 V, Gate Source Threshold Voltage 0.4 to 1.3 V. Tags: Surface Mount. More details for FTK15N12CSDFN can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK15N12CSDFN
  • Manufacturer
    First Silicon
  • Description
    12 V, 15 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    15 A
  • Drain Source Resistance
    3.1 to 11 milli-ohm
  • Drain Source Breakdown Voltage
    12 V
  • Gate Source Voltage
    8 V
  • Gate Source Threshold Voltage
    0.4 to 1.3 V
  • Gate Charge
    36 nC
  • Switching Speed
    180 to 1700 ns
  • Power Dissipation
    1.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    CSDFN
  • Applications
    Lithium ion battery
View details on the manufacturer's website
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