FTK2004

Note : Your request will be directed to First Silicon.

The FTK2004 from First Silicon is a MOSFET with Continous Drain Current 1.2 A, Drain Source Resistance 240 to 950 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.35 to 1.0 V. Tags: Surface Mount. More details for FTK2004 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FTK2004
  • Manufacturer
    First Silicon
  • Description
    20 V, 1.2 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.2 A
  • Drain Source Resistance
    240 to 950 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.35 to 1.0 V
  • Switching Speed
    2.9 to 18 ns
  • Power Dissipation
    0.150 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SOT-723
  • Applications
    Load/Power Switching, Interfacing Switching, Battery Management for Ultra Small Portable Electronics, Logic Level Shift
  • Note
    Input Capacitance :- 160 pF

Latest MOSFETs

View more products