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FTK2009SOT883

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The FTK2009SOT883 from First Silicon is a MOSFET with Continous Drain Current -0.66 A, Drain Source Resistance 520 to 700 milli-ohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -0.35 to -1.1 V. Tags: Surface Mount. More details for FTK2009SOT883 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK2009SOT883
  • Manufacturer
    First Silicon
  • Description
    -20 V, -0.66 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.66 A
  • Drain Source Resistance
    520 to 700 milli-ohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -0.35 to -1.1 V
  • Switching Speed
    5.8 to 32.7 ns
  • Power Dissipation
    100 mW
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    DFN1006-3L
  • Applications
    Load/Power Switching, Interfacing Switching, Battery Management for Ultra Small Portable, Electronics Logic Level Shift
  • Note
    Input Capacitance :- 170 pF
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