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FTK2012

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The FTK2012 from First Silicon is a MOSFET with Continous Drain Current 12 A, Drain Source Resistance 11 to 41 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.35 to 1 V. Tags: Surface Mount. More details for FTK2012 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK2012
  • Manufacturer
    First Silicon
  • Description
    20 V, 12 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12 A
  • Drain Source Resistance
    11 to 41 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.35 to 1 V
  • Gate Charge
    32 nC
  • Switching Speed
    12 to 100 ns
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    DFN22
  • Applications
    Load Switch for Portable Applications
  • Note
    Input Capacitance :- 1800 pF
View details on the manufacturer's website
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