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FTK20N06DA

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The FTK20N06DA from First Silicon is a MOSFET with Continous Drain Current 20 A, Drain Source Resistance 26 to 50 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.0 to 2.5 V. Tags: Surface Mount. More details for FTK20N06DA can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK20N06DA
  • Manufacturer
    First Silicon
  • Description
    60 V, 20 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    20 A
  • Drain Source Resistance
    26 to 50 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.0 to 2.5 V
  • Gate Charge
    18 to 36 nC
  • Switching Speed
    2 to 16 ns
  • Power Dissipation
    40 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Applications
    Power switching application
  • Note
    Input Capacitance :- 1700 pF
View details on the manufacturer's website
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