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FTK2306D

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The FTK2306D from First Silicon is a MOSFET with Continous Drain Current 50 to 80 A, Drain Source Resistance 4.4 to 8.8 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.35 to 1 V. Tags: Surface Mount. More details for FTK2306D can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK2306D
  • Manufacturer
    First Silicon
  • Description
    20 V, 50 to 80 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    50 to 80 A
  • Drain Source Resistance
    4.4 to 8.8 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.35 to 1 V
  • Gate Charge
    23.9 to 48 nC
  • Switching Speed
    13.5 to 127 ns
  • Power Dissipation
    54.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Applications
    Networking, Load Switch, LED applications, Quick Charger
  • Note
    Input Capacitance :- 5030 pF
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