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FTK2306DFN33

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The FTK2306DFN33 from First Silicon is a MOSFET with Continous Drain Current 41 to 65 A, Drain Source Resistance 4.5 to 8.8 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.3 to 1 V. Tags: Surface Mount. More details for FTK2306DFN33 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK2306DFN33
  • Manufacturer
    First Silicon
  • Description
    20 V, 41 to 65 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    41 to 65 A
  • Drain Source Resistance
    4.5 to 8.8 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.3 to 1 V
  • Gate Charge
    29.8 to 45 nC
  • Switching Speed
    13.5 to 127 ns
  • Power Dissipation
    44.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    DFN33
  • Applications
    MB / VGA / Vcore, POL Applications, SMPS 2nd SR
  • Note
    Input Capacitance :- 2790 pF
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