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FTK2309DFN22

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The FTK2309DFN22 from First Silicon is a MOSFET with Continous Drain Current -5.4 to -8.5 A, Drain Source Resistance 22 to 45 milli-ohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage -0.3 to -1.0 V. Tags: Surface Mount. More details for FTK2309DFN22 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK2309DFN22
  • Manufacturer
    First Silicon
  • Description
    -20 V, -5.4 to -8.5 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -5.4 to -8.5 A
  • Drain Source Resistance
    22 to 45 milli-ohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    -0.3 to -1.0 V
  • Gate Charge
    16.1 to 25 nC
  • Switching Speed
    8.2 to 135 ns
  • Power Dissipation
    3.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    DFN22
  • Applications
    Notebook, Load Switch, Battery Protection, Hand-held Instruments
  • Note
    Input Capacitance :- 350 pF
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