FTK2312

Note : Your request will be directed to First Silicon.

The FTK2312 from First Silicon is a MOSFET with Continous Drain Current 4.5 A, Drain Source Resistance 27 to 40 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.5 to 1.2 V. Tags: Surface Mount. More details for FTK2312 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK2312
  • Manufacturer
    First Silicon
  • Description
    20 V, 4.5 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.5 A
  • Drain Source Resistance
    27 to 40 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.5 to 1.2 V
  • Gate Charge
    10 to 15 nC
  • Switching Speed
    18 to 108 ns
  • Power Dissipation
    1.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Battery protection, Load switch, Power management
  • Note
    Input Capacitance :- 500 pF

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