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FTK2314D

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The FTK2314D from First Silicon is a MOSFET with Continous Drain Current 12 to 20 A, Drain Source Resistance 21 to 51 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for FTK2314D can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK2314D
  • Manufacturer
    First Silicon
  • Description
    20 V, 12 to 20 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12 to 20 A
  • Drain Source Resistance
    21 to 51 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Gate Charge
    7.7 to 11 nC
  • Switching Speed
    7.6 to 45 ns
  • Power Dissipation
    20.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Applications
    Notebook, Load Switch, Hend-Held Instruments, Networking
  • Note
    Input Capacitance :- 775 pF
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