1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. First Silicon
  6. FTK2405DFN22

FTK2405DFN22

Request Quote

Note : Your request will be directed to First Silicon.

The FTK2405DFN22 from First Silicon is a MOSFET with Continous Drain Current -4.2 A, Drain Source Resistance 53 to 130 milli-ohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -0.6 to -1.3 V. Tags: Surface Mount. More details for FTK2405DFN22 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FTK2405DFN22
  • Manufacturer
    First Silicon
  • Description
    -30 V, -4.2 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -4.2 A
  • Drain Source Resistance
    53 to 130 milli-ohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -0.6 to -1.3 V
  • Switching Speed
    2.32 to 34.88 ns
  • Power Dissipation
    1.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN22
  • Applications
    Advanced trench process technology, High density cell design for ultra low on-resistance.
  • Note
    Input Capacitance :- 826.18 pF
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products