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FTK2501DFN22

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The FTK2501DFN22 from First Silicon is a MOSFET with Continous Drain Current -2.0 to -2.8 A, Drain Source Resistance 90 to 150 milli-ohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -0.4 to -1 V. Tags: Surface Mount. More details for FTK2501DFN22 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK2501DFN22
  • Manufacturer
    First Silicon
  • Description
    -20 V, -2.0 to -2.8 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.0 to -2.8 A
  • Drain Source Resistance
    90 to 150 milli-ohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -0.4 to -1 V
  • Gate Charge
    7.2 nC
  • Switching Speed
    11 to 50 ns
  • Power Dissipation
    0.7 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN22
  • Applications
    Power Management in Note book, Portable Equipment, Battery Powered System, Load Switch, DSC
  • Note
    Input Capacitance :- 480 pF
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