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FTK2661L

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The FTK2661L from First Silicon is a MOSFET with Continous Drain Current -2.3 to -2.9 A, Drain Source Resistance 110 to 180 milli-ohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1 to -3 V. Tags: Surface Mount. More details for FTK2661L can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK2661L
  • Manufacturer
    First Silicon
  • Description
    -60 V, -2.3 to -2.9 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.3 to -2.9 A
  • Drain Source Resistance
    110 to 180 milli-ohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1 to -3 V
  • Gate Charge
    11 to 15.4 nC
  • Switching Speed
    5.8 to 65 ns
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-6
  • Applications
    DC-DC Converters, Load Switch, Power Management.
  • Note
    Input Capacitance :- 560 pF
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