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FTK2A04NS

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The FTK2A04NS from First Silicon is a MOSFET with Continous Drain Current 1.2 to 1.9 A, Drain Source Resistance 320 to 400 milli-ohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for FTK2A04NS can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK2A04NS
  • Manufacturer
    First Silicon
  • Description
    200 V, 1.2 to 1.9 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.2 to 1.9 A
  • Drain Source Resistance
    320 to 400 milli-ohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    10 to 14 nC
  • Switching Speed
    3 to 33 ns
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-223
  • Applications
    Power Management in TV Inverter
  • Note
    Input Capacitance :- 500 pF
View details on the manufacturer's website
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