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FTK3412

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The FTK3412 from First Silicon is a MOSFET with Continous Drain Current 18 A, Drain Source Resistance 9 to 17.5 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.4 to 2.5 V. Tags: Surface Mount. More details for FTK3412 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK3412
  • Manufacturer
    First Silicon
  • Description
    30 V, 18 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    18 A
  • Drain Source Resistance
    9 to 17.5 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.4 to 2.5 V
  • Gate Charge
    8 to 12 nC
  • Switching Speed
    8.5 to 26 ns
  • Power Dissipation
    20 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    DFN3X3E-8_EP2
  • Applications
    PWM applications, Load switch, Power management
  • Note
    Input Capacitance :- 600 pF
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