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FTK3418DFN22

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The FTK3418DFN22 from First Silicon is a MOSFET with Continous Drain Current -9.4 A, Drain Source Resistance 24 to 37 milli-ohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1 to -3 V. Tags: Surface Mount. More details for FTK3418DFN22 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK3418DFN22
  • Manufacturer
    First Silicon
  • Description
    -30 V, -9.4 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -9.4 A
  • Drain Source Resistance
    24 to 37 milli-ohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1 to -3 V
  • Gate Charge
    19 nC
  • Switching Speed
    5 to 55 ns
  • Power Dissipation
    2 to 3.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN 2×2-6L-J
  • Applications
    Load Switches, DC/DC Conversion, Motor Drives
  • Note
    Input Capacitance :- 1539 pF

Technical Documents
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