FTK3424DFN22

Note : Your request will be directed to First Silicon.

The FTK3424DFN22 from First Silicon is a MOSFET with Continous Drain Current 7 to 12 A, Drain Source Resistance 8 to 16.5 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 1.8 V. Tags: Surface Mount. More details for FTK3424DFN22 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FTK3424DFN22
  • Manufacturer
    First Silicon
  • Description
    30 V, 7 to 12 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7 to 12 A
  • Drain Source Resistance
    8 to 16.5 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 1.8 V
  • Gate Charge
    16 nC
  • Switching Speed
    6 to 29 ns
  • Power Dissipation
    1.4 to 2.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN22
  • Applications
    DC/DC Conversion, Power Routing, Motor Drives
  • Note
    Input Capacitance :- 1379 pF

Technical Documents

Latest MOSFETs

View more products