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FTK35N03PDFN56

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The FTK35N03PDFN56 from First Silicon is a MOSFET with Continous Drain Current 35 A, Drain Source Resistance 5.0 to 9.5 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.0 to 3.0 V. Tags: Surface Mount. More details for FTK35N03PDFN56 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK35N03PDFN56
  • Manufacturer
    First Silicon
  • Description
    30 V, 35 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    35 A
  • Drain Source Resistance
    5.0 to 9.5 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.0 to 3.0 V
  • Gate Charge
    19 nC
  • Switching Speed
    10 to 34 ns
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    PDFN5×6-8L
  • Applications
    High side switch in POL DC/DC converter
  • Note
    Input Capacitance :- 1265 pF

Technical Documents
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