1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. First Silicon
  6. FTK3810HNN

FTK3810HNN

Download Datasheet Request Quote

Note : Your request will be directed to First Silicon.

The FTK3810HNN from First Silicon is a MOSFET with Continous Drain Current 6.8 to 19.5 A, Drain Source Resistance 8.5 to 14 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Surface Mount. More details for FTK3810HNN can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FTK3810HNN
  • Manufacturer
    First Silicon
  • Description
    30 V, 27 W, N-Channel Enhancement Mode, MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    6.8 to 19.5 A
  • Drain Source Resistance
    8.5 to 14 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    15.6 to 31 nC
  • Switching Speed
    3.8 to 42 ns
  • Power Dissipation
    27 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    DFN3x3
  • Applications
    MB / VGA / Vcore, POL Applications, SMPS 2nd SR
  • Note
    Input Capacitance :- 900 pF

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products