FTK3912F

Note : Your request will be directed to First Silicon.

The FTK3912F from First Silicon is a MOSFET with Continous Drain Current 4.74 to 7.5 A, Drain Source Resistance 19 to 34 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.2 V. Tags: Surface Mount. More details for FTK3912F can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FTK3912F
  • Manufacturer
    First Silicon
  • Description
    30 V, 4.1 W, N-Channel Enhancement Mode, MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.74 to 7.5 A
  • Drain Source Resistance
    19 to 34 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.2 V
  • Gate Charge
    4.1 to 8 nC
  • Switching Speed
    2.8 to 30 ns
  • Power Dissipation
    4.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SOT-89
  • Applications
    Notebook, Load Switch, Battery Protection, Hand-held Instruments
  • Note
    Input Capacitance :- 500 pF

Technical Documents

Latest MOSFETs

View more products