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FTK3960DFN56

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The FTK3960DFN56 from First Silicon is a MOSFET with Continous Drain Current 72 to 115 A, Drain Source Resistance 1.9 to 3.3 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Surface Mount. More details for FTK3960DFN56 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK3960DFN56
  • Manufacturer
    First Silicon
  • Description
    30 V, 135 W, N-Channel Enhancement Mode, MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    72 to 115 A
  • Drain Source Resistance
    1.9 to 3.3 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    40 to 75 nC
  • Switching Speed
    32 to 130 ns
  • Power Dissipation
    135 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    DFN56
  • Applications
    MB / VGA / Vcore, POL Applications, SMPS 2nd SR
  • Note
    Input Capacitance :- 8000 pF

Technical Documents
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