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FTK40G10DFN33

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The FTK40G10DFN33 from First Silicon is a MOSFET with Continous Drain Current 25.3 to 40 A, Drain Source Resistance 15 to 22.5 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.0 to 3.0 V. Tags: Surface Mount. More details for FTK40G10DFN33 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK40G10DFN33
  • Manufacturer
    First Silicon
  • Description
    100 V, 25.3 to 40 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    25.3 to 40 A
  • Drain Source Resistance
    15 to 22.5 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.0 to 3.0 V
  • Gate Charge
    16 nC
  • Switching Speed
    11 to 53.2 ns
  • Power Dissipation
    54 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    DFN33
  • Applications
    Consumer electronic power supply, Motor control, Synchronous-rectificatio, Isolated DC/DC convertor, Invertors
  • Note
    Input Capacitance :- 1051 pF

Technical Documents
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