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FTK4806T

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The FTK4806T from First Silicon is a MOSFET with Continous Drain Current 19 to 30 A, Drain Source Resistance 7.2 to 12 milli-ohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.0 to 2.5 V. Tags: Surface Mount. More details for FTK4806T can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK4806T
  • Manufacturer
    First Silicon
  • Description
    40 V, 19 to 30 A, N-Channel, P-Channel Enhancement mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    19 to 30 A
  • Drain Source Resistance
    7.2 to 12 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.0 to 2.5 V
  • Gate Charge
    12.2 to 24 nC
  • Switching Speed
    2.2 to 130 ns
  • Power Dissipation
    46 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    DFN56
  • Applications
    MB / VGA / Vcore, POL Applications, SMPS 2nd SR, USB Type C
  • Note
    Input Capacitance :- 2200 pF

Technical Documents
View details on the manufacturer's website
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