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FTK4959D

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The FTK4959D from First Silicon is a MOSFET with Continous Drain Current -57 to -90 A, Drain Source Resistance 4.7 to 8.3 milli-ohm, Drain Source Breakdown Voltage -40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1.2 to -2.5 V. Tags: Surface Mount. More details for FTK4959D can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK4959D
  • Manufacturer
    First Silicon
  • Description
    -40 V, -57 to -90 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -57 to -90 A
  • Drain Source Resistance
    4.7 to 8.3 milli-ohm
  • Drain Source Breakdown Voltage
    -40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1.2 to -2.5 V
  • Gate Charge
    115 to 160 nC
  • Switching Speed
    12.7 to 600 ns
  • Power Dissipation
    101 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Applications
    Notebook, Load Switch, Battery Protection, Hand-held Instruments
  • Note
    Input Capacitance :- 9100 pF

Technical Documents
View details on the manufacturer's website
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