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FTK8982BDFN56

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The FTK8982BDFN56 from First Silicon is a MOSFET with Continous Drain Current 48 to 75 A, Drain Source Resistance 5.8 to 11 milli-ohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Surface Mount. More details for FTK8982BDFN56 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK8982BDFN56
  • Manufacturer
    First Silicon
  • Description
    -20 to 20 V, 48 to 75 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    48 to 75 A
  • Drain Source Resistance
    5.8 to 11 milli-ohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    31 to 45 nC
  • Switching Speed
    16 to 60 ns
  • Power Dissipation
    98 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    PPAK5x6
  • Applications
    Motor Drive, Power Tools, LED Lighting
  • Note
    Input Capacitance :- 2580 pF
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