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FTK9988DFN25

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The FTK9988DFN25 from First Silicon is a MOSFET with Continous Drain Current 8 A, Drain Source Resistance 10.5 to 27.5 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.5 to 1.0 V. Tags: Surface Mount. More details for FTK9988DFN25 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK9988DFN25
  • Manufacturer
    First Silicon
  • Description
    -12 to 12 V, 8 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    8 A
  • Drain Source Resistance
    10.5 to 27.5 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.5 to 1.0 V
  • Gate Charge
    13.5 nC
  • Switching Speed
    6 to 87 ns
  • Power Dissipation
    1.8 to 3.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN25
  • Applications
    Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems.
  • Note
    Input Capacitance :- 950 pF
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