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FTN006N06TH

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The FTN006N06TH from First Silicon is a MOSFET with Continous Drain Current 362 to 500 A, Drain Source Resistance 0.60 to 1.25 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Surface Mount. More details for FTN006N06TH can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTN006N06TH
  • Manufacturer
    First Silicon
  • Description
    -20 to 20 V, 362 to 500 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    362 to 500 A
  • Drain Source Resistance
    0.60 to 1.25 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    274 nC
  • Switching Speed
    46 to 161 ns
  • Power Dissipation
    375 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    TOLL-8L
  • Applications
    Power appliances, E- Tool appliances
  • Note
    Input Capacitance :- 17306 pF
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