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IRF3205DD

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The IRF3205DD from First Silicon is a MOSFET with Continous Drain Current 80 to 110 A, Drain Source Resistance 8 milli-ohm, Drain Source Breakdown Voltage 55 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Surface Mount. More details for IRF3205DD can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRF3205DD
  • Manufacturer
    First Silicon
  • Description
    -20 to 20 V, 80 to 110 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    80 to 110 A
  • Drain Source Resistance
    8 milli-ohm
  • Drain Source Breakdown Voltage
    55 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Switching Speed
    14 to 101 ns
  • Power Dissipation
    200 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    TO-263
  • Note
    Input Capacitance :- 3247 pF
View details on the manufacturer's website
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