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RM2309

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The RM2309 from First Silicon is a MOSFET with Continous Drain Current -1.6 to -2 A, Drain Source Resistance 200 to 300 milli-ohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1.2 to -2.5 V. Tags: Surface Mount. More details for RM2309 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM2309
  • Manufacturer
    First Silicon
  • Description
    -20 to 20 V, -1.6 to -2 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -1.6 to -2 A
  • Drain Source Resistance
    200 to 300 milli-ohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1.2 to -2.5 V
  • Gate Charge
    8.2 to 12 nC
  • Switching Speed
    5.2 to 67 ns
  • Power Dissipation
    1.56 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Motor Drive, Power Tools, LED Lighting
  • Note
    Input Capacitance :- 615 pF
View details on the manufacturer's website
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