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SIF18N20AD

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The SIF18N20AD from First Silicon is a MOSFET with Continous Drain Current 9 to 18 A, Drain Source Resistance 0.12 to 0.15 ohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Surface Mount. More details for SIF18N20AD can be seen below.

Product Specifications

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Product Details

  • Part Number
    SIF18N20AD
  • Manufacturer
    First Silicon
  • Description
    -30 to 30 V, 9 to 18 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    9 to 18 A
  • Drain Source Resistance
    0.12 to 0.15 ohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    22.5 nC
  • Switching Speed
    18 to 50 ns
  • Power Dissipation
    50 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Applications
    Lighting, Uniterrupted Power Supply, Led Tv, Consumer Appliances
  • Note
    Input Capacitance :- 1150 pF
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