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SIFL9N20AI

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The SIFL9N20AI from First Silicon is a MOSFET with Continous Drain Current 4.5 to 9 A, Drain Source Resistance 0.20 to 0.45 ohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 2.5 V. Tags: Through Hole. More details for SIFL9N20AI can be seen below.

Product Specifications

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Product Details

  • Part Number
    SIFL9N20AI
  • Manufacturer
    First Silicon
  • Description
    -20 to 20 V, 4.5 to 9 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.5 to 9 A
  • Drain Source Resistance
    0.20 to 0.45 ohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.5 to 2.5 V
  • Gate Charge
    16.5 nC
  • Switching Speed
    35 to 128 ns
  • Power Dissipation
    100 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-251
  • Applications
    Lighting, Uniterrupted Power Supply, Switch Mode Power Supply, AC-DC Conversion Circuit
  • Note
    Input Capacitance :- 815 pF
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