1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. First Silicon
  6. WMK053NV8HGS

WMK053NV8HGS

Request Quote

Note : Your request will be directed to First Silicon.

The WMK053NV8HGS from First Silicon is a MOSFET with Continous Drain Current 79 to 125 A, Drain Source Resistance 4.7 to 5.5 milli-ohm, Drain Source Breakdown Voltage 85 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Through Hole. More details for WMK053NV8HGS can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    WMK053NV8HGS
  • Manufacturer
    First Silicon
  • Description
    -20 to 20 V, 79 to 125 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    79 to 125 A
  • Drain Source Resistance
    4.7 to 5.5 milli-ohm
  • Drain Source Breakdown Voltage
    85 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    61.3 nC
  • Switching Speed
    16.5 to 51.8 ns
  • Power Dissipation
    162 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Battery Management System, Power Management Switching, Motor Drive
  • Note
    Input Capacitance :- 4645 pF
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products